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The IRGB5B120KDPBF is a single NPT IGBT from Infineon Technologies, housed in a TO-220AB through-hole package. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 12 A at 25°C. The device has a power dissipation rating of 89 W and operates within a junction temperature range of -55°C to 150°C. Designed for high-voltage switching applications, it supports frequencies between 10 kHz and 30 kHz.
Verify component authenticity through authorized channels due to obsolete status. Confirm datasheet revisions match design requirements. Check for compatible replacement parts if production continuity is critical. Ensure storage conditions preserve lead integrity before soldering.
Evaluate thermal resistance and switching speed against application demands. Compare with newer generations for improved efficiency. Consider package compatibility with existing PCB layouts. Assess voltage margins for system reliability under transient conditions.
This IGBT belongs to the UltraFast series by Infineon Technologies, targeting medium-power industrial applications. It replaces older International Rectifier designs following corporate integration. The TO-220AB package provides standard mounting solutions for discrete semiconductor implementations.
The device is designed for switching frequencies between 10 kHz and 30 kHz.
No, the IRGB5B120KDPBF is listed as an obsolete product.