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Product Detailed Parameters
- Description：IGBT 600V 13A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：13 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 6.5A
- Power - Max：60 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRGBC20UD2 is a TO-220AB insulated gate bipolar transistor (IGBT) with an integrated ultrafast soft recovery diode. It features a collector-to-emitter voltage of 600 V and a continuous collector current of 13 A at 25°C case temperature. The device has a maximum power dissipation of 60 W at 25°C and operates within a junction temperature range of -55 to +150°C. Key electrical parameters include a saturation voltage of 3.0 V max at 15 V gate drive, total switching loss of 0.43 mJ typ, and diode reverse recovery charge of 138 nC max.
Feature Summary
- Co-packaged IGBT and HEXFRED ultrafast soft recovery diode in a single package
- Optimized for high operating frequencies exceeding 5 kHz
- Includes all tail losses in the specified switching-loss rating
Applications
- High-voltage motor control systems
- Uninterruptible power supply (UPS)
- Power supply circuits
Procurement Notes
Verify the component authenticity by checking the manufacturer marking against the official datasheet specifications. Confirm the package type matches the required TO-220AB outline. Ensure the ordering suffix corresponds to the specific tape and reel or tube packaging configuration required for your assembly process. Cross-reference the revision number on the datasheet with the product documentation provided by the supplier.
Selection Notes
Select this component when designing circuits requiring high-frequency operation above 5 kHz. Consider the thermal resistance values for heatsink design, specifically the junction-to-case resistance. Evaluate the gate charge requirements against the available driver capability. Review the safe operating area curves to ensure the application stays within the clamped inductive load limits during switching transitions.
Part Context
This part belongs to International Rectifier's UltraFast CoPack IGBT line, now under Infineon Technologies. These devices combine an n-channel IGBT with a co-packaged diode to simplify circuit design. The series targets applications needing compact solutions for high-power conversion where switching speed and reduced parasitic effects are critical for system efficiency.
Replacement Considerations
Check for direct replacements within the same UltraFast CoPack family that share the identical TO-220AB pinout and voltage ratings. Verify that any substitute maintains the same switching loss characteristics and reverse recovery time to ensure compatibility with existing gate drive circuits and thermal management designs.
