IRGBC30F

$2.25

Description：IGBT 600V 31A TO-220AB
Series：-

SKU:75b670805133 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 31A TO-220AB
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：31 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 17A
Power - Max：100 W
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220AB
Grade：-
Qualification：-

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IRGBC30F

Overview

The IRGBC30F is a fast-speed, N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies. It features a collector-to-emitter voltage rating of 600V and a continuous collector current of 17A at 25°C case temperature. The device offers a maximum saturation voltage of 2.1V at 15V gate drive and 17A current. Designed for medium operating frequencies between 1kHz and 10kHz, it utilizes a TO-220AB package with a junction-to-case thermal resistance of 1.2°C/W.

Feature Summary

Optimized for medium frequency operation ranging from 1 to 10 kHz
High usable current density compared to comparable bipolar transistors
Simpler gate-drive requirements similar to power MOSFETs
Switching-loss rating includes all tail losses

Applications

Medium frequency switching applications
High-voltage power conversion circuits
High-current industrial equipment

Procurement Notes

Verify the manufacturer designation as Infineon Technologies or International Rectifier on official datasheets. Confirm the specific package type is TO-220AB and check for RoHS compliance status in the latest documentation. Ensure the part number matches exactly to avoid confusion with similar series components.

Selection Notes

Select this component when designing circuits requiring 600V blocking capability and moderate switching speeds up to 10kHz. Consider the thermal management requirements based on the specified junction-to-case resistance. Evaluate the gate drive voltage compatibility, noting the standard 15V operation for optimal saturation performance.

Part Context

This IGBT belongs to the high-power discrete semiconductor category manufactured by Infineon Technologies. It represents a hybrid technology combining MOSFET input characteristics with bipolar output conduction. The device is intended for robust power electronics designs where efficiency and switching speed are critical factors.

Replacement Considerations

Consult official replacement guides for equivalent 600V, 17A IGBTs in TO-220AB packages. Verify pinout compatibility and thermal resistance specifications before substitution.