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The IRGC100B60KC is a Gen 5 IGBT bare die from Infineon Technologies, rated for 600 V collector-emitter voltage and 100 A continuous collector current. It features a maximum saturation voltage of 2.1 V and operates within a temperature range of -55 °C to 150 °C. The device exhibits turn-on and turn-off times of 130 ns each, making it suitable for high-power industrial applications requiring robust switching performance.
Verify the exact part number against official manufacturer documentation before procurement. Confirm that the bare die format aligns with your assembly capabilities. Ensure compliance with RoHS directives and check for any specific handling requirements associated with semiconductor components.
Select this component when a 600V rating and 100A current capacity are required. Consider its 2.1V saturation voltage for thermal management. Evaluate the 130ns switching speed against your application's frequency needs. Compare against other Gen 5 variants for optimal cost-performance balance.
This component belongs to Infineon's Gen 5 IGBT family, specifically designed for demanding industrial applications. It represents an evolution in silicon power technology, offering improved efficiency and reliability compared to previous generations. The bare die format allows for custom packaging solutions tailored to specific system requirements.
IRGC100B60KB is listed as an active alternative with identical electrical specifications.