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Product Detailed Parameters
- Description：IGBT CHIP
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 200A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：380 nC
- Td (on/off) @ 25°C：130ns/280ns
- Test Condition：400V, 200A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
Download product information
Overview
The IRGC4275B is a bare die Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features an N-channel configuration with a collector-emitter voltage rating of 650 V and a clamped inductive load current capability of 800 A. The device utilizes Trench IGBT technology to achieve low saturation voltage and switching losses, supporting a maximum junction temperature of 175 °C. Key electrical characteristics include a typical VCE(sat) of 1.6 V at 200 A and 25 °C, and an integrated internal gate resistance of approximately 2.0 Ω.
Feature Summary
- Low VCE(ON) achieved through Trench IGBT technology
- Integrated internal gate resistor for easier paralleling
- Short circuit rated with square RBSOA
- Positive VCE(ON) temperature coefficient
Applications
- Industrial Motor Drives
- Inverter Systems
- Uninterruptible Power Supplies (UPS)
- Welding Equipment
Procurement Notes
Verify the specific ordering suffix and package form against official documentation before procurement. Confirm that the component is supplied as a sawn wafer on film rather than packaged discrete units. Ensure handling protocols strictly adhere to ESD safe workstations and class 10,000 clean room environments to prevent contamination or degradation of the bare die.
Selection Notes
Select this component for high-power applications requiring rugged transient performance and excellent current sharing in parallel operation. The integrated gate resistor simplifies design complexity when multiple devices are used. Consider the thermal properties of the assembly, as application current is limited by the maximum junction temperature and heat dissipation capabilities.
Part Context
This part belongs to the IRGC series of bare die IGBTs from International Rectifier, now part of Infineon Technologies. Unlike standard packaged modules, this component is a semiconductor die intended for direct mounting in custom power assemblies. It represents a specialized solution for manufacturers designing their own power electronics modules.
Replacement Considerations
IRGC4275F
FAQ
What is the function of the integrated gate resistor?
The integrated gate resistor facilitates easier paralleling of multiple devices by ensuring consistent switching behavior and reducing the need for external gate resistors.
Is the IRGC4275B short-circuit rated?
Yes, the device is short circuit rated with a Short Circuit Safe Operating Area (SCSOA) of 5.5 µs under specified conditions.
What is the recommended environment for handling this component?
The product must be handled only in a class 10,000 or better-designated clean room environment using a vacuum wand with a non-metallic ESD protected tip.
