IRGC50B120UB

Description：IGBT NPT 1200V 50A DIE
Series：-

SKU:aaa14273bc15 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1200V 50A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 50A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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IRGC50B120UB

Overview

The IRGC50B120UB is a Gen 5 discrete IGBT from Infineon Technologies, rated at 1200 V and 50 A. It features a maximum collector-emitter saturation voltage of 3.5 V, with turn-on and turn-off times of 70 ns and 125 ns respectively. The component operates within a junction temperature range of -55 °C to 150 °C.

Feature Summary

Utilizes TRENCHSTOP™ technology for optimized switching performance
Designed for high-efficiency industrial power conversion applications

Applications

Industrial motor drives
Welding equipment
Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact electrical tolerances and packaging specifications. Ensure compatibility with existing thermal management designs before procurement.

Selection Notes

Select this component for applications requiring robust 1200 V blocking capability and moderate current handling. Evaluate the trade-off between its 3.5 V saturation voltage and switching speeds against alternative Gen 5 or Gen 6 devices based on system efficiency targets.

Part Context

This device belongs to Infineon's Gen 5 IGBT portfolio, which integrates Trench and Fieldstop technologies. It serves as a core switching element in medium-power industrial inverters and converters, offering a balance between conduction losses and switching dynamics.