IRGC50B60KB

Description：IGBT NPT 600V 50A DIE
Series：-

SKU:21d74c349896 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 50A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：1.35V @ 15V, 10A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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IRGC50B60KB

Overview

The IRGC50B60KB is a Gen 5 discrete IGBT from Infineon Technologies, rated for 600 V and 50 A. It features a maximum collector-emitter saturation voltage of 1.35 V, with a turn-on time of 75 ns and a turn-off time of 90 ns. The device operates within a temperature range of -55 °C to 150 °C.

Feature Summary

Utilizes TRENCHSTOP™ technology for optimized switching performance
Designed for high efficiency in industrial power applications

Applications

Industrial motor drives
Welding equipment
Power supplies

Procurement Notes

Verify the component status as active or preferred before procurement. Confirm that the specific ordering suffix matches the required electrical characteristics and package type. Ensure compliance with RoHS directives and lead-free manufacturing standards specified in the official datasheet.

Selection Notes

Select this component based on its 600 V rating and 50 A current capacity. Consider the 1.35 V saturation voltage for conduction loss calculations. Evaluate the 75 ns turn-on and 90 ns turn-off times against the target switching frequency requirements of the application circuit.

Part Context

This part belongs to the Gen 5 IGBT family, which utilizes TRENCHSTOP™ technology. This generation focuses on balancing switching speed and conduction losses for industrial applications. It complements other discrete IGBTs and diodes in the Infineon portfolio designed for high-power systems.