IRGI4056DPBF

$2.16

Description：IGBT TRENCH 600V 18A TO220AB FP
Series：-

SKU:b6a9ac5a521f Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 600V 18A TO220AB FP
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：18 A
Current - Collector Pulsed (Icm)：27 A
Vce(on) (Max) @ Vge, Ic：1.65V @ 15V, 9A
Power - Max：34 W
Switching Energy：59µJ (on), 177µJ (off)
Input Type：Standard
Gate Charge：25 nC
Td (on/off) @ 25°C：34ns/84ns
Test Condition：400V, 9A, 22Ohm, 15V
Reverse Recovery Time (trr)：72 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO-220AB Full-Pak
Grade：-
Qualification：-

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IRGI4056DPBF

Overview

The IRGI4056DPBF is a single N-channel IGBT from Infineon Technologies, packaged in TO-220AB Full-Pak. It utilizes Low VCE(ON) Trench IGBT technology for efficient power switching. The device features a collector-emitter voltage rating of 600V and a continuous collector current of 18A. Maximum pulsed collector current is specified at 27A. The saturation voltage is 1.65V when measured at a gate-emitter voltage of 15V and a collector current of 9A. The maximum power dissipation is rated at 34W.

Feature Summary

Utilizes trench IGBT technology to achieve low saturation voltage characteristics.

Applications

High voltage power applications

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and RoHS compliance status. Ensure that the requested part number matches the exact electrical specifications required for the target circuit design. Cross-reference the datasheet version to confirm accuracy of thermal and switching parameters before finalizing procurement orders.

Selection Notes

Select this component for circuits requiring 600V blocking capability with moderate current handling up to 18A. Consider the TO-220AB Full-Pak package for through-hole mounting requirements. Evaluate the 1.65V saturation voltage at 9A against system efficiency targets. Confirm that the 34W power dissipation rating aligns with the available thermal management solution in the final assembly.

Part Context

This discrete semiconductor belongs to Infineon's portfolio of single IGBTs designed for general-purpose power switching. The product line emphasizes low conduction losses through advanced trench technology. It serves as a fundamental building block for various power conversion topologies where reliable high-voltage switching is necessary.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical voltage, current, and package specifications to guarantee functional compatibility within the existing circuit layout.