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The IRGI4060DPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TO-220ABFP through-hole package. The device features a maximum collector-emitter voltage of 600V and a continuous collector current of 14A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.3V, a gate-emitter leakage current of 100nA, and a power dissipation rating of 37W. It operates within a temperature range of -40°C to +175°C.
Verify component authenticity and datasheet alignment before integration. Confirm that the specific suffix matches design requirements. Check for end-of-life status or obsolescence notices from the manufacturer. Ensure compatibility with existing thermal and electrical constraints. Validate RoHS compliance status against project specifications.
Select this component based on its 600V blocking capability and 14A current handling. Consider the TO-220ABFP package for adequate heat dissipation in moderate power scenarios. Evaluate the 2.3V saturation voltage for efficiency requirements. Ensure the driver circuit supports standard IGBT gate thresholds. Assess thermal resistance limits for the intended operating environment.
This part belongs to the IRGP/IRGI series of high-voltage IGBTs from Infineon. It serves as a discrete switching element in power electronics. The TO-220ABFP package provides mechanical stability and thermal conductivity. It is designed for medium-power industrial applications requiring reliable switching performance.
Public confirmed substitute part numbers are not available in the provided documentation. Verify cross-reference data directly with the manufacturer's official resources.