IRGI4062DPBF

$2.81

Description：IGBT TRENCH 600V 22A TO220AB FP
Series：-

SKU:6bebf340ef4a Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 600V 22A TO220AB FP
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：22 A
Current - Collector Pulsed (Icm)：44 A
Vce(on) (Max) @ Vge, Ic：1.58V @ 15V, 12A
Power - Max：48 W
Switching Energy：31µJ (on), 183µJ (off)
Input Type：Standard
Gate Charge：48 nC
Td (on/off) @ 25°C：41ns/100ns
Test Condition：400V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)：56 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO-220AB Full-Pak
Grade：-
Qualification：-

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IRGI4062DPBF

Overview

The IRGI4062DPBF is a single silicon Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, housed in a TO-220AB Full-Pak through-hole package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 22 A at 25°C. The device exhibits a low saturation voltage of 1.8 V and supports a power dissipation of 48 W. Operating temperatures range from -55°C to +150°C junction temperature, with gate-emitter limits of ±20 V.

Feature Summary

Single IGBT configuration for discrete switching applications
Low saturation voltage design for reduced conduction losses
Robust thermal performance within specified operating ranges

Applications

Discrete IGBT comparison circuits
Three-phase motor drive inverter systems
High-power switching applications

Procurement Notes

Verify component authenticity and datasheet alignment before integration. Confirm that the TO-220AB Full-Pak package matches your PCB footprint requirements. Check for end-of-life status or obsolescence notifications from Infineon. Ensure thermal management solutions accommodate the 48 W dissipation rating. Validate gate drive compatibility with the ±20 V limit specifications.

Selection Notes

Select this component for applications requiring 600 V blocking capability and moderate current handling up to 22 A. Consider the TO-220AB package for through-hole mounting constraints. Evaluate thermal resistance requirements against the 48 W dissipation limit. Compare alternative IGBTs if higher current ratings or different packaging formats are necessary for the specific system design.

Part Context

This part belongs to Infineon's IGBT transistor family, specifically designed for medium-power industrial applications. It utilizes trench technology for improved switching characteristics. The component serves as a fundamental switching element in power electronics, often paired with anti-parallel diodes in bridge configurations for AC/DC conversion and motor control tasks.