IRGI4086PBF

Description：IGBT TRENCH 300V 25A TO220AB FP
Series：-

SKU:6130277d850c Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 300V 25A TO220AB FP
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：300 V
Current - Collector (Ic) (Max)：25 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2.96V @ 15V, 120A
Power - Max：43 W
Switching Energy：-
Input Type：Standard
Gate Charge：65 nC
Td (on/off) @ 25°C：36ns/112ns
Test Condition：196V, 25A, 10Ohm
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO-220AB Full-Pak
Grade：-
Qualification：-

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IRGI4086PBF

Overview

The IRGI4086PBF is a single N-channel IGBT manufactured by Infineon Technologies, utilizing advanced trench technology. It features a collector-emitter breakdown voltage of 300 V and a continuous collector current of 25 A at 25°C case temperature. The device supports a repetitive peak current of 230 A and operates up to a junction temperature of 150°C. Packaged in a TO-220AB Full-Pak with three leads (Gate, Collector, Emitter), it offers a typical saturation voltage of 1.29 V at 25 A.

Feature Summary

Advanced trench IGBT technology for low on-state voltage and energy per pulse
Optimized specifically for sustain and energy recovery circuits in plasma display panels
High repetitive peak current capability for robust performance
Lead-free package construction

Applications

Plasma Display Panel (PDP) sustain circuits
Energy recovery circuits in PDP applications

Procurement Notes

Verify the component status as industrial market qualified. Confirm RoHS compliance and lead-free packaging specifications against the latest manufacturer documentation. Ensure the TO-220AB Full-Pak mounting torque requirements are met during assembly. Check for any specific qualification standards referenced on the official Infineon website prior to procurement.

Selection Notes

Select this component for designs requiring high efficiency in plasma display panel applications. The low VCE(on) and EPULSE ratings contribute to improved panel efficiency. Ensure the circuit design accommodates the 300 V breakdown voltage and 25 A continuous current limits. Verify thermal management capabilities to support the 150°C maximum junction temperature operation.

Part Context

This discrete IGBT belongs to the Infineon product line designed for industrial markets. It replaces older technologies with trench structures to enhance switching performance and reduce power losses. The device is intended for use in high-frequency switching applications where low conduction losses and high reliability are critical.