IRGIB15B60KD1P

IRGIB15B60KD1P

  • Description:IGBT NPT 600V 19A TO220AB FP
  • Series:-

SKU:9d4efa71bcfb Category: Brand:

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Product Detailed Parameters

  • Description:IGBT NPT 600V 19A TO220AB FP
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):19 A
  • Current - Collector Pulsed (Icm):38 A
  • Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 15A
  • Power - Max:52 W
  • Switching Energy:127µJ (on), 334µJ (off)
  • Input Type:Standard
  • Gate Charge:56 nC
  • Td (on/off) @ 25°C:30ns/173ns
  • Test Condition:400V, 15A, 22Ohm, 15V
  • Reverse Recovery Time (trr):67 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220AB Full-Pak
  • Grade:-
  • Qualification:-

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IRGIB15B60KD1P

Overview

The IRGIB15B60KD1P is a single N-channel IGBT from Infineon Technologies, utilizing TRENCHSTOP™ technology. It features a collector-emitter voltage (VCEO) of 600 V and a continuous collector current rating of 19 A at 25°C. The device has a maximum power dissipation of 52 W and a collector-emitter saturation voltage of 1.8 V. It is housed in a TO-220AB Full-Pak through-hole package.

Feature Summary

  • Integrates TRENCHSTOP™ technology for improved energy efficiency
  • Designed with an NPT chip structure for robust performance
  • Configured as a single discrete IGBT component

Applications

  • Automotive drivetrain applications
  • Industrial motor control systems
  • Power conversion circuits

Procurement Notes

Verify the specific ordering suffix KD1P to ensure the correct tape-and-reel or bulk packaging variant matches your assembly requirements. Confirm that the TO-220AB Full-Pak footprint aligns with your PCB design constraints. Cross-reference the datasheet version to ensure compliance with current automotive qualification standards before finalizing procurement.

Selection Notes

Select this component when a 600 V blocking capability and 19 A continuous current handling are required in a through-hole format. The 1.8 V saturation voltage offers a balance between conduction losses and switching performance. Consider the 52 W thermal dissipation limit and ensure adequate heatsinking for the intended operating environment.

Part Context

This part belongs to Infineon's TRENCHSTOP™ IGBT family, which utilizes advanced trench gate technology. The IRGIB series is specifically engineered for high-efficiency power switching applications. The KD1P designation indicates the specific packaging and terminal configuration within the broader product line.

FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is 600 V.

Does this component include an anti-parallel diode?

No, the IRGIB15B60KD1P is a single IGBT without an integrated anti-parallel diode.

IRGIB15B60KD1PIRGIB15B60KD1P

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