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The IRGIB15B60KD1P is a single N-channel IGBT from Infineon Technologies, utilizing TRENCHSTOP™ technology. It features a collector-emitter voltage (VCEO) of 600 V and a continuous collector current rating of 19 A at 25°C. The device has a maximum power dissipation of 52 W and a collector-emitter saturation voltage of 1.8 V. It is housed in a TO-220AB Full-Pak through-hole package.
Verify the specific ordering suffix KD1P to ensure the correct tape-and-reel or bulk packaging variant matches your assembly requirements. Confirm that the TO-220AB Full-Pak footprint aligns with your PCB design constraints. Cross-reference the datasheet version to ensure compliance with current automotive qualification standards before finalizing procurement.
Select this component when a 600 V blocking capability and 19 A continuous current handling are required in a through-hole format. The 1.8 V saturation voltage offers a balance between conduction losses and switching performance. Consider the 52 W thermal dissipation limit and ensure adequate heatsinking for the intended operating environment.
This part belongs to Infineon's TRENCHSTOP™ IGBT family, which utilizes advanced trench gate technology. The IRGIB series is specifically engineered for high-efficiency power switching applications. The KD1P designation indicates the specific packaging and terminal configuration within the broader product line.
The maximum collector-emitter voltage (VCEO) is 600 V.
No, the IRGIB15B60KD1P is a single IGBT without an integrated anti-parallel diode.