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The IRGIB6B60KDPBF is a single silicon NPT IGBT from Infineon Technologies, housed in a TO-220FP-3 through-hole package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 11 A at 25°C. The device exhibits a low collector-emitter saturation voltage of 1.8 V and supports a power dissipation of 38 W. Operating temperatures range from -55°C to +175°C junction temperature, with gate-emitter limits of ±20 V.
This component is officially classified as obsolete or end-of-life by the manufacturer. Availability is restricted, and sourcing may require verification of existing stock or alternative suppliers. Procurement should prioritize checking official discontinuation notifications and verifying part authenticity due to limited supply chains.
Select this component for designs requiring 600V isolation with moderate current handling in a standard through-hole footprint. Consider thermal management capabilities given the 38W dissipation limit in the TO-220FP-3 package. Verify compatibility with existing gate drive requirements and ensure replacement strategies are defined due to its discontinued status.
The IRGIB6B60KDPBF belongs to Infineon's legacy IGBT portfolio, specifically designed for general-purpose industrial switching. It represents an earlier generation of trench-stop technology optimized for cost-effective solutions in motor control and power conversion before newer high-frequency generations became standard.
Public confirmed substitutes include IRGIB7B60KDPBF and IRGB6B60KPBF. These alternatives offer similar voltage ratings but may differ in current capacity or packaging. Verify pinout compatibility and thermal characteristics when transitioning to these replacements.