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Product Detailed Parameters
- Description：IGBT NPT 600V 12A TO220AB FP
- Series：-
- Mfr：International Rectifier
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：12:00 AM
- Current - Collector Pulsed (Icm)：24 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 8A
- Power - Max：39 W
- Switching Energy：160µJ (on), 160µJ (off)
- Input Type：Standard
- Gate Charge：29 nC
- Td (on/off) @ 25°C：23ns/140ns
- Test Condition：400V, 8A, 50Ohm, 15V
- Reverse Recovery Time (trr)：95 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220AB Full-Pak
- Grade：-
- Qualification：-
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Overview
The IRGIB7B60KDPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, formerly International Rectifier. It utilizes silicon technology and features a TO-220FP-3 through-hole package. The device supports a maximum collector-emitter voltage of 600 V and delivers a continuous collector current of 12 A at 25 °C. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V and a power dissipation rating of 39 W. The gate-emitter voltage range is specified from -20 V to +20 V. Operating temperatures span from -55 °C to +175 °C.
Feature Summary
- Integrated ultrafast soft recovery diode for efficient commutation
- Low collector-emitter saturation voltage for reduced conduction losses
- Designed for high reliability in hard-switching applications
Applications
- Discrete IGBT three-phase motor drive inverters
- Comparison circuits requiring fast switching characteristics
- General purpose power switching systems
Procurement Notes
This component is officially listed as End-of-Life (EOL). Verification of availability should focus on authorized distributors offering remaining stock or approved replacement alternatives. Confirm RoHS compliance status and check for specific discontinuation notifications from the manufacturer before procurement planning.
Selection Notes
Select this part for low-voltage, medium-current applications requiring integrated freewheeling diodes. Ensure thermal management accommodates the 39 W dissipation limit in the TO-220FP-3 package. Verify that the 600 V rating aligns with system bus voltages and that the 12 A current capacity meets peak load requirements without exceeding junction temperature limits.
Part Context
The IRGIB7B60KDPBF belongs to the IRGIB series of discrete IGBTs from Infineon. This series is characterized by low saturation voltage and integrated ultrafast diodes, targeting efficiency improvements in motor drives and inverters. It represents a legacy product line from International Rectifier, now managed under Infineon Technologies' portfolio.
Replacement Considerations
Consult official Infineon EOL notifications for confirmed substitute part numbers. When evaluating cross-compatibility, verify pinout alignment, voltage/current ratings, and thermal resistance values. Do not assume direct interchangeability with other 600V IGBTs without detailed datasheet comparison.
