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The IRGP20B120UD-EP is an Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier. It integrates a fast recovery anti-parallel diode within a single package. The device features a collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 20A at 25°C. It utilizes the Ultrafast Soft Recovery Diode technology to minimize switching losses and electromagnetic interference during operation.
Verify the manufacturer marking against International Rectifier or Infineon documentation, as the company was acquired. Confirm the presence of the 'EP' suffix which typically denotes environmental compliance. Ensure the TO-247AD package matches the required mechanical footprint for the target assembly.
Select this component when a 1200V blocking capability and 20A continuous current are required in a compact module. The integrated diode simplifies circuit design for half-bridge configurations. Evaluate thermal management requirements based on the specific switching frequency and duty cycle of the application.
This part belongs to the IRGP series of IGBT modules from International Rectifier. These components were widely used in industrial power electronics before the integration of International Rectifier into Infineon Technologies. The datasheet specifications remain valid for legacy system maintenance and replacement.
Direct replacements include the IRGP20B120UD-E PBF variant. Cross-reference with Infineon's current portfolio for equivalent 1200V/20A IGBTs with integrated diodes, such as the FF200R12ME4 series, ensuring pin compatibility and thermal characteristics match.