IRGP35B60PD-EP

Description：IGBT NPT 600V 60A TO-247AD
Series：-

SKU:66c4cfc12880 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 60A TO-247AD
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：60 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：2.55V @ 15V, 35A
Power - Max：308 W
Switching Energy：220µJ (on), 215µJ (off)
Input Type：Standard
Gate Charge：160 nC
Td (on/off) @ 25°C：26ns/110ns
Test Condition：390V, 22A, 3.3Ohm, 15V
Reverse Recovery Time (trr)：42 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD
Grade：-
Qualification：-

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IRGP35B60PD-EP

Overview

The IRGP35B60PD-EP is a WARP2 series N-channel IGBT with an integrated HEXFRED ultrafast soft-recovery diode, housed in a TO-247AD package. It utilizes NPT technology for positive temperature coefficient characteristics and minimal tail current. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 60 A at 25°C case temperature. Maximum power dissipation reaches 308 W at 25°C. Operating junction temperatures range from -55°C to +150°C.

Feature Summary

NPT technology provides positive temperature coefficient behavior for safe parallel operation.
Integrated HEXFRED ultrafast soft-recovery co-pack diode minimizes reverse recovery losses.
Optimized switching performance enables high-frequency operation up to 150 kHz.

Applications

Telecom and server switch-mode power supplies
Power factor correction and zero-voltage switching circuits
Uninterruptible power supplies

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact electrical tolerances and packaging specifications. Ensure the component meets industrial market qualification standards required for the target application environment before finalizing procurement.

Selection Notes

Select this component for applications requiring high switching frequencies and low conduction losses. The positive temperature coefficient facilitates reliable parallel operation for higher current demands. Verify thermal management requirements align with the specified junction-to-case thermal resistance values.

Part Context

This part belongs to the WARP2 series of Insulated Gate Bipolar Transistors designed for high-efficiency power conversion. It integrates a fast recovery diode to reduce system complexity and improve overall converter efficiency in demanding power supply architectures.