SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IRGP4055DPBF is a single N-channel IGBT from Infineon Technologies, housed in a TO-247AC-3 package. It features a collector-emitter voltage (VCEO) of 300 V and a continuous collector current (Ic) of 110 A. The device has a maximum power dissipation (Pd) of 255 W at 25°C. Operating temperature range spans from -55°C to +175°C junction temperature. Gate-emitter voltage limits are ±20 V. This component utilizes Trench technology for optimized switching performance.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance status prior to integration. Check for obsolescence notices as manufacturing status may vary. Ensure thermal management solutions match the specified power dissipation ratings for reliable operation.
Select this component for applications requiring 300 V blocking capability and high current handling up to 110 A. Consider the TO-247AC-3 package for through-hole assembly requirements. Evaluate thermal resistance parameters against system heat sink capabilities. Verify gate drive voltage compatibility within the ±20 V limit.
This IGBT belongs to Infineon's discrete semiconductor portfolio designed for medium-power switching tasks. It complements other devices in the IRGP series, offering specific voltage and current ratings tailored for industrial power electronics. The TO-247AC-3 package provides robust mechanical stability and efficient heat transfer for demanding environments.
Consult official Infineon documentation for direct pin-compatible substitutes. Cross-reference specifications such as VCEO, Ic, and package type when evaluating alternatives. Verify that any replacement meets the same thermal and electrical performance standards required by the original design.