ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH 600V 48A TO-247AD
- Series：-
- Mfr：Infineon Technologies
- Package：Tube,Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：48 A
- Current - Collector Pulsed (Icm)：72 A
- Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 24A
- Power - Max：250 W
- Switching Energy：115µJ (on), 600µJ (off)
- Input Type：Standard
- Gate Charge：75 nC
- Td (on/off) @ 25°C：41ns/104ns
- Test Condition：400V, 24A, 10Ohm, 15V
- Reverse Recovery Time (trr)：89 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
Download product information
Overview
The IRGP4062D-EPBF is an n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes low VCE(on) Trench IGBT technology and is housed in a TO-247AD package. The device supports a maximum collector-to-emitter voltage of 600V and a continuous collector current of 24A at a case temperature of 100°C. It features a maximum junction temperature of 175°C, a short circuit safe operating area of 5μs, and a typical saturation voltage of 1.65V.
Feature Summary
- Low VCE(on) Trench IGBT Technology
- Ultra fast soft Recovery Co-Pak Diode
- Positive VCE(on) Temperature co-efficient
Applications
- Motor drives
- Switch mode power supplies
- High frequency inverters
Procurement Notes
Verify the component against official datasheets to confirm the specific TO-247AD package variant and ensure compliance with RoHS standards. Confirm that the ordering suffix matches the exact electrical characteristics required for your design. Cross-reference part numbers with manufacturer documentation to avoid counterfeit components.
Selection Notes
Select this component when high efficiency across a wide range of applications is required. Its suitability for various switching frequencies stems from its combination of low VCE(on) and low switching losses. Ensure thermal management aligns with the specified maximum junction temperature limits.
Part Context
This component belongs to Infineon's family of insulated gate bipolar transistors designed for robust transient performance. It integrates a high-speed diode to minimize electromagnetic interference and improve current sharing in parallel operations. The rugged design ensures reliability under demanding electrical conditions.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical ratings before replacing the component in existing designs.
FAQ
What is the maximum short circuit time for this IGBT?
The device supports a short circuit safe operating area of 5 microseconds.
Does the IRGP4062D-EPBF include an integrated diode?
Yes, it features an integrated ultrafast soft recovery Co-Pak diode.
What is the maximum operating junction temperature?
The maximum junction temperature is 175 degrees Celsius.
