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The IRGP4063D1PbF is a 600V N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It operates in the TO-247AC package with a maximum collector current of 100A at 25°C and 60A at 100°C. The device features a typical saturation voltage of 1.65V at 48A and supports a short-circuit withstand time of 5µs. It has a maximum power dissipation of 330W at 25°C and operates within a junction temperature range of -40°C to +175°C.
Verify the exact ordering suffix against official datasheets to confirm the specific package variant (TO-247AC or TO-247AD). Confirm RoHS compliance status and industrial qualification level requirements prior to procurement. Ensure that the component's absolute maximum ratings align with the system's operational limits.
Select this IGBT for applications requiring high reliability under hard switching conditions. Consider the thermal resistance characteristics and the need for adequate heatsinking given the 330W power dissipation rating. Evaluate gate drive requirements based on the specified total gate charge and threshold voltage parameters.
This component belongs to the IRGP series of 600V trench IGBTs from International Rectifier, now part of Infineon Technologies. It is designed as a robust solution for medium-power switching applications, offering improved performance over previous generations through optimized trench technology and soft recovery diodes.
IRGP4063D1-EPbF is a qualified alternative with a TO-247AD package.
The device supports a short-circuit withstand time of 5 microseconds.
Yes, it includes an integrated ultrafast soft recovery diode.
The maximum operating junction temperature is 175°C.