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The IRGP4063PBF is a silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 100 A at 25 °C. The device exhibits a typical collector-emitter saturation voltage of 2.05 V and supports a power dissipation of 330 W. It utilizes a TO-247-3 through-hole package with a gate-emitter voltage range of -20 V to +20 V.
Verify the specific suffix against official documentation, as variations such as D1 or EPBF may exist. Confirm RoHS compliance status directly from the manufacturer datasheet. Check current lifecycle status, as availability may be limited or discontinued. Ensure the TO-247-3 package matches the target PCB footprint requirements before ordering.
Select this component for designs requiring high current density and robust switching characteristics. Evaluate the 2.05 V saturation voltage against system efficiency targets. Consider the 330 W power dissipation limit relative to the available heatsinking capacity. Verify that the 600 V blocking voltage provides adequate margin for the DC bus voltage in the intended circuit topology.
This IGBT belongs to the IRGP series, designed for medium-power applications. It combines N-channel IGBT technology with an integrated anti-parallel diode. The TO-247-3 package facilitates easy mounting on heat sinks. It serves as a core switching element in inverters and converters where reliability under high load conditions is critical.
Cross-reference part numbers like IRGP4063D1PBF for potential pin-compatible alternatives. Verify electrical parameters match exactly before substitution. Consult official replacement guides for end-of-life notifications.