IRGP4066-EPBF

Description：IGBT TRENCH 600V 140A TO-247AD
Series：-

SKU:7db5cdebdb28 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 600V 140A TO-247AD
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：140 A
Current - Collector Pulsed (Icm)：225 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 75A
Power - Max：454 W
Switching Energy：2.47mJ (on), 2.16mJ (off)
Input Type：Standard
Gate Charge：150 nC
Td (on/off) @ 25°C：50ns/200ns
Test Condition：400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD
Grade：-
Qualification：-

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IRGP4066-EPBF

Overview

The IRGP4066-EPBF is a single N-channel IGBT with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes low VCE(on) Trench IGBT technology to achieve high efficiency and low switching losses. The device features a maximum collector-to-emitter voltage of 600V and a nominal current of 75A. It supports a continuous collector current of 140A at 25°C case temperature and withstands a clamped inductive load current of 300A. The component operates within a junction temperature range of -55°C to +175°C and includes a short circuit safe operating area (SOA) rating of 5μs.

Feature Summary

Low VCE(on) Trench IGBT Technology
Maximum Junction Temperature of 175 °C
5 μS Short Circuit SOA
Square RBSOA

Applications

Uninterruptible Power Supplies (UPS)
Solar Inverters
Induction Heating
Industrial Motor Drives
Welding Applications

Procurement Notes

Verify the specific package variant required for your design, as the EP suffix corresponds to the TO-247AD package while the standard version uses TO-247AC. Confirm RoHS compliance status and lead-free packaging specifications directly with the manufacturer or authorized distributors before finalizing procurement orders.

Selection Notes

Select this component for applications requiring rugged transient performance and excellent current sharing in parallel operations due to its positive VCE(on) temperature coefficient. Ensure the gate drive circuitry accommodates the specified gate threshold voltage and leakage currents to maintain stable switching characteristics across the full operating temperature range.

Part Context

This part belongs to the IRGP40xx series of insulated gate bipolar transistors designed for medium to high power industrial applications. The series emphasizes optimized switching speeds and conduction losses, making it suitable for systems operating at switching frequencies ranging from 8kHz to 30kHz where efficiency and reliability are critical.

Replacement Considerations

Consult official datasheets for cross-reference compatibility. Verify that any substitute device matches the 600V breakdown voltage, 75A nominal current, and TO-247 package dimensions to ensure mechanical and electrical interchangeability without redesigning the PCB layout.