IRGP4069DPBF

Description：IGBT TRENCH 600V 76A TO-247AC
Series：-

SKU:44aeb1155935 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 600V 76A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：76 A
Current - Collector Pulsed (Icm)：105 A
Vce(on) (Max) @ Vge, Ic：1.85V @ 15V, 35A
Power - Max：268 W
Switching Energy：390µJ (on), 632µJ (off)
Input Type：Standard
Gate Charge：69 nC
Td (on/off) @ 25°C：46ns/105ns
Test Condition：400V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr)：120 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC

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IRGP4069DPBF

Overview

The IRGP4069DPbF is a single n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes low VCE(on) Trench IGBT technology and features a TO-247AC package for through-hole mounting. The device supports a maximum collector-to-emitter voltage of 600V and a continuous collector current of 76A at 25°C case temperature. It operates within a junction temperature range of -55°C to +175°C and offers a short circuit withstand time of at least 5μs.

Feature Summary

Low saturation voltage achieved via Trench IGBT technology
Ultrafast soft recovery integrated diode
Square Reverse Bias Safe Operating Area (RBSOA)
Positive temperature coefficient for collector-emitter saturation voltage

Applications

Motor drives
Switched-mode power supplies (SMPS)
High-frequency inverters
Welding equipment

Procurement Notes

Verify the specific suffix against official documentation to confirm package type and lead-free status. Confirm RoHS compliance requirements match project specifications. Ensure thermal management design accommodates the specified junction-to-case thermal resistance values under expected operating conditions.

Selection Notes

Select this component for applications requiring high efficiency across wide load ranges due to low switching losses and low on-state voltage. Consider the rugged transient performance and excellent current sharing capabilities when designing parallel operation circuits. Evaluate gate drive requirements based on the specified threshold voltage and total gate charge parameters.

Part Context

This part belongs to the IRGP40xx series of insulated gate bipolar transistors from Infineon Technologies. It is designed primarily for industrial market applications where reliability and high switching frequencies are critical. The product integrates both the IGBT switch and the freewheeling diode in a single package to simplify circuit design and reduce parasitic inductance.

Replacement Considerations

The datasheet lists IRGP4069D-EPbF as a related variant utilizing the TO-247AD package instead of TO-247AC. Verify mechanical footprint compatibility before substitution.