IRGP4072DPBF

$3.35

Description：IGBT TRENCH 300V 70A TO-247AC
Series：-

SKU:997ee3bf8bb5 Category: Single IGBTs Brand: International Rectifier

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 300V 70A TO-247AC
Series：-
Mfr：International Rectifier
Package：Bulk
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：300 V
Current - Collector (Ic) (Max)：70 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 40A
Power - Max：180 W
Switching Energy：409µJ (on), 838µJ (off)
Input Type：Standard
Gate Charge：73 nC
Td (on/off) @ 25°C：18ns/144ns
Test Condition：240V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)：122 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC

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IRGP4072DPBF

Overview

The IRGP4072DPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier. It features an integrated ultrafast soft recovery anti-parallel diode and is housed in a TO-247AC package for through-hole mounting. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 100 A. It operates within a temperature range of -40 °C to +175 °C, with a maximum power dissipation of 380 W at 25 °C.

Feature Summary

Integrates an ultrafast soft recovery anti-parallel diode for efficient commutation.
Utilizes planar trench gate and punch-through technology for optimized performance.
Features low switching losses and high short-circuit capability.

Applications

Uninterruptible Power Supplies (UPS)
Solar Inverters
Motor Drives
Welding Equipment

Procurement Notes

Verify the manufacturer designation on official datasheets, as Infineon Technologies acquired International Rectifier. Confirm that the component meets RoHS compliance standards required for your specific manufacturing region. Ensure the TO-247AC package dimensions align with your thermal management design constraints before finalizing procurement.

Selection Notes

Select this component for applications requiring robust 650 V blocking capability and high current handling up to 100 A. The integrated diode simplifies circuit topology by eliminating the need for external freewheeling diodes. Consider the thermal resistance characteristics when designing heatsinking solutions for continuous operation near maximum ratings.

Part Context

This IGBT belongs to the IRGP series designed for medium-power switching applications. It combines the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. The inclusion of a fast recovery diode makes it suitable for inductive load switching where reverse current flow is common.