IRGP4263-EPBF

Overview

The IRGP4263-EPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, housed in a TO-247AD through-hole package. It features a collector-to-emitter breakdown voltage of 650 V and supports continuous collector currents of 90 A at 25°C case temperature and 60 A at 100°C. The device incorporates trench technology to achieve low saturation voltage and switching losses. It offers a short-circuit withstand time of 5.5 µs and operates within a junction temperature range of -40°C to +175°C.

Feature Summary

• Low on-state voltage drop and reduced switching energy losses for improved system efficiency
• Square Reverse Bias Safe Operating Area (RBSOA) supporting rugged hard-switching performance
• Positive temperature coefficient of saturation voltage enabling stable current sharing in parallel configurations
• 5.5 µs short-circuit safe operating area allowing implementation of effective protection schemes

Applications

• Industrial motor drives
• Power inverters
• Uninterruptible power supplies (UPS)
• Welding equipment

Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm the exact package variant and compliance status. Ensure that the ordering information matches the required thermal and electrical specifications for your application design. Cross-reference datasheet revision history for any updates to absolute maximum ratings or testing conditions before finalizing procurement.

Selection Notes

Select this component based on its 650V rating and high current capacity suitable for medium-power switching applications. Consider the thermal resistance characteristics when designing heat sinks, as the device dissipates significant power at elevated temperatures. Evaluate gate drive requirements to ensure proper switching times and minimize total switching losses during operation.

Part Context

This IGBT belongs to the IRGP series, which utilizes trench gate technology to optimize conduction and switching performance. The product line is designed for robust industrial applications requiring high reliability and efficient power conversion. The EPBF designation indicates an enhanced version compliant with environmental standards, typically packaged in the TO-247AD form factor for superior thermal management.

Replacement Considerations

IRGP4263PbF serves as a direct functional substitute, differing primarily in the TO-247AC package instead of TO-247AD. Verify mechanical footprint compatibility and mounting torque specifications when swapping between these package variants.

FAQ

What is the maximum short-circuit withstand time for this IGBT?

The device supports a short-circuit withstand time of 5.5 µs under specified conditions.

Does the IRGP4263-EPBF have a positive temperature coefficient?

Yes, it features a positive VCE(on) temperature coefficient, which facilitates reliable parallel operation.

What is the reverse bias safe operating area characteristic?

It provides a square RBSOA, ensuring improved reliability during hard switching events.