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Product Detailed Parameters
- Description：IGBT 650V 90A TO-247AC
- Series：-
- Mfr：International Rectifier
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：90 A
- Current - Collector Pulsed (Icm)：192 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 48A
- Power - Max：325 W
- Switching Energy：2.9mJ (on), 1.4mJ (off)
- Input Type：Standard
- Gate Charge：145 nC
- Td (on/off) @ 25°C：70ns/140ns
- Test Condition：400V, 48A, 10Ohm, 15V
- Reverse Recovery Time (trr)：170 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
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Overview
The IRGP4263DPBF is a WARP2 series Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon Technologies. It features an N-channel configuration with an integrated ultrafast soft recovery anti-parallel diode. The device is rated for a collector-emitter voltage of 600 V and a continuous collector current of 42 A at 25°C. It utilizes TO-247AD packaging to facilitate thermal management in high-power applications. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a typical turn-off time of 180 ns, and a maximum junction temperature rating of 175°C.
Feature Summary
- WARP2 technology designed for low switching losses and high efficiency
- Integrated ultrafast soft recovery diode reduces reverse recovery charge
- Robust TO-247AD package suitable for high-current thermal dissipation
Applications
- High-frequency motor drives and servo amplifiers
- Switched-mode power supplies (SMPS)
- Induction heating systems
Procurement Notes
Verify the manufacturer designation on the component marking, as International Rectifier operations were acquired by Infineon. Confirm the specific suffix 'DPBF' indicates lead-free compliance and plastic packaging. Cross-reference the datasheet revision date to ensure parameter consistency with current production batches.
Selection Notes
Select this component for designs requiring 600V blocking capability with moderate current handling up to 42A. Ensure the gate drive circuit supports the required voltage levels within the ±20V limit. Evaluate thermal resistance requirements based on the expected switching frequency and ambient conditions to maintain junction temperature below the maximum rating.
Part Context
This IGBT belongs to the WARP2 family, which optimizes the trade-off between conduction and switching losses. It serves as a discrete power switch alternative to modules in medium-power converters. The inclusion of the fast recovery diode allows for use in half-bridge configurations without external freewheeling diodes.
Replacement Considerations
Check for direct pin-compatible replacements within the same WARP2 series, such as the IRGP4063DPBF or IRGP4062DPBF, noting differences in current ratings. Verify that any substitute maintains the 600V Vces and similar switching characteristics to ensure circuit compatibility.
