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The IRGP4266DPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes Trench Co-Pack technology to achieve low saturation voltage. The device features a collector-emitter breakdown voltage of 650V and supports a continuous collector current of 140A at 25°C. It operates within a junction temperature range of -55°C to +175°C, with a maximum power dissipation of 455W. The component is housed in a TO-247AC package.
Verify the specific suffix against official datasheets to confirm RoHS compliance and lead-free status. Ensure the TO-247AC pinout matches the target PCB footprint. Confirm that the 140A rating aligns with the system's thermal design limits under actual operating conditions rather than ideal laboratory environments.
Select this component when a 650V IGBT with high current capacity is required. The low Vce(sat) characteristic makes it suitable for efficiency-critical designs. Consider the thermal resistance of the TO-247AC package during heat sink selection to maintain junction temperatures within safe operating limits.
This part belongs to Infineon's portfolio of high-performance IGBTs. It is often compared with similar models like the IRGP4266D-EPBF for environmental compliance variations. The device serves as a core switching element in medium-to-high power electronic converters.
Cross-reference with IRGP4266D-EPBF for equivalent electrical characteristics with potential packaging or compliance differences. Verify pin compatibility before substitution.