IRGP4269DPBF

Description：IGBT 600V TO247 COPAK
Series：-

SKU:0707d43410aa Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V TO247 COPAK
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-

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IRGP4269DPBF

Overview

The IRGP4269DPBF is a single IGBT transistor manufactured by Infineon Technologies, utilizing TRENCH technology. It features a collector-emitter maximum voltage of 600 V and a continuous collector current of 135 A at 25°C. The device has a saturation voltage of 2.1 V and a power dissipation rating of 454 W. It operates within a temperature range of -55°C to +175°C and is housed in a TO-247AC-3 package.

Feature Summary

Single IGBT configuration with TRENCH technology for optimized switching performance
High current handling capability suitable for demanding power applications
Robust thermal design supporting high power dissipation in a standard through-hole package

Applications

Motor drives
Induction heating
Welding equipment

Procurement Notes

Verify component authenticity and datasheet version upon acquisition. Confirm that the specific batch matches the required electrical characteristics and packaging standards. Ensure storage conditions comply with manufacturer guidelines to maintain reliability before installation.

Selection Notes

Select this component for applications requiring high current capacity and fast switching speeds. Consider the TO-247AC-3 package for adequate thermal management. Evaluate the 600V rating against system voltage requirements to ensure safe operation margins under all load conditions.

Part Context

This part belongs to the IRGP series of insulated gate bipolar transistors from Infineon Technologies. These devices are designed for medium to high-power applications, offering a balance between conduction losses and switching speed. The series utilizes advanced trench gate technology to enhance efficiency compared to older planar designs.