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The IRGP4620D-EPBF is a 600V, 40A ultrafast Insulated Gate Bipolar Transistor (IGBT) from International Rectifier. It utilizes thin-wafer channel technology to minimize conduction and switching losses. The device features a 5µs short-circuit rating and is designed for high-frequency operation between 8kHz and 30kHz. It includes an integrated soft-recovery diode with low reverse recovery charge (Qrr). The component operates up to a maximum junction temperature of 175°C and is housed in a TO-247AC or TO-247AD package.
Verify the specific suffix variant (TO-247AC vs TO-247AD) against mechanical drawings. Confirm RoHS compliance status as manufacturing sources transitioned from International Rectifier to Infineon. Ensure the ordering part number matches the exact thermal resistance requirements of the target application design.
Select this IGBT for applications requiring high switching frequencies up to 30kHz. The positive temperature coefficient of Vce(on) supports parallel configurations for higher current handling. Verify that the gate drive circuitry accommodates the device's switching characteristics and that the thermal management system maintains the junction temperature within the 175°C limit.
This component belongs to International Rectifier's expanded 600V channel ultrafast IGBT series. It complements other models like the IRGP4650D and IRGP4660D, offering a 40A solution optimized for systems demanding high reliability and efficiency. The series represents a shift toward thinner wafer technologies to enhance power density and reduce electromagnetic interference.
Direct substitutes include IRGP4650DPBF and IRGP4660DPBF. These alternatives share similar packaging and voltage ratings but offer higher continuous collector currents of 50A and 60A respectively. Designers must verify if the increased current capacity aligns with their thermal and footprint constraints.