SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IRGP4630D-EPBF is a 600 V n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, housed in a TO-247AD package. It supports a continuous collector current of 47 A at 25°C and 30 A at 100°C case temperature. The device features a typical saturation voltage of 1.65 V at 18 A and 25°C. It operates within a junction temperature range of -40°C to +175°C and provides a short-circuit safe operating area capability of 5 µs.
Verify the specific ordering suffix '-E' against official Infineon documentation to confirm lead-free status and RoHS compliance. Ensure the TO-247AD package outline matches the mechanical constraints of the target design. Cross-reference the datasheet revision date to validate that all electrical parameters and thermal resistance values are current for production units.
Select this component when high efficiency is required across wide load ranges due to low saturation voltage and switching losses. The positive temperature coefficient facilitates stable current sharing in parallel configurations. Verify that the 5 µs short-circuit withstand time aligns with the system's fault detection and shutdown speed requirements.
This part belongs to the IRGB/IB/P/S4630D/EPbF family from Infineon Technologies. It shares core electrical characteristics with variants like the IRGP4630DPbF but utilizes the distinct TO-247AD package form factor. The family is designed for industrial applications requiring robust performance and high reliability under hard switching conditions.
IRGP4630DPbF
The device supports a short-circuit withstand time of 5 µs.
Yes, it integrates an ultrafast soft recovery diode.
The typical drive voltage is 15 V, with a maximum continuous rating of ±20 V.