IRGP4690D-EPBF

Description：IGBT 600V 140A TO-247AD
Series：-

SKU:3782a6b15ed9 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 140A TO-247AD
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：140 A
Current - Collector Pulsed (Icm)：225 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 75A
Power - Max：454 W
Switching Energy：2.47mJ (on), 2.16mJ (off)
Input Type：Standard
Gate Charge：150 nC
Td (on/off) @ 25°C：50ns/200ns
Test Condition：400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr)：155 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD

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IRGP4690D-EPBF

Overview

The IRGP4690D-EPBF is a 600V n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It is housed in a TO-247AD package and rated for a continuous collector current of 90A at a case temperature of 100°C. The device features a typical saturation voltage of 1.70V at 75A and supports a maximum junction temperature of 175°C. It provides a short circuit safe operating area duration of at least 5μs.

Feature Summary

Low VCE(ON) and switching losses for high efficiency across wide application ranges
Square RBSOA and rugged hard switching performance for improved reliability
Positive VCE(ON) temperature coefficient to ensure excellent current sharing in parallel operation
5μs short circuit SOA enabling robust short circuit protection schemes

Applications

Industrial Motor Drive
Inverters
Uninterruptible Power Supplies (UPS)
Welding

Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to confirm the specific package variant and compliance status. Confirm that the component meets the required industrial qualification standards and RoHS compliance before integration into designs. Cross-reference datasheet revision history for any updates to electrical characteristics or testing conditions.

Selection Notes

Select this component for applications requiring high power density and efficient thermal management. Ensure the gate drive circuitry can support the specified VGE thresholds and charge requirements. Verify that the system's cooling solution maintains the case temperature within limits to sustain the rated 90A continuous current capability.

Part Context

This IGBT belongs to the family of high-power discrete semiconductors designed for demanding industrial environments. It combines fast switching capabilities with robust overload tolerance. The integrated diode simplifies circuit topology for half-bridge configurations commonly found in motor control and power conversion systems.