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Product Detailed Parameters
- Description：IGBT 650V 70A TO-247AC
- Series：-
- Mfr：International Rectifier
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：70 A
- Current - Collector Pulsed (Icm)：105 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 35A
- Power - Max：273 W
- Switching Energy：1.3mJ (on), 500µJ (off)
- Input Type：Standard
- Gate Charge：105 nC
- Td (on/off) @ 25°C：50ns/105ns
- Test Condition：400V, 35A, 10Ohm, 15V
- Reverse Recovery Time (trr)：150 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
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Overview
The IRGP4750DPBF is a 650 V, 70 A N-channel ultrafast Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes trench wafer technology to reduce conduction and switching losses. The device is co-packaged with a soft-recovery diode and optimized for switching frequencies between 8 kHz and 30 kHz. It features a 5 µs short-circuit rating and operates within a junction temperature range of -40 °C to +175 °C. The component is housed in a TO-247AC three-pin through-hole package.
Feature Summary
- Utilizes trench wafer technology to minimize both conduction and switching energy losses.
- Co-packaged with a soft-recovery diode to optimize system performance at high switching speeds.
- Engineered with a 5 µs short-circuit capability to ensure robust operation under fault conditions.
Applications
- Uninterruptible Power Supplies (UPS)
- Solar Inverters
- Industrial Motor Drives
- Welding Equipment
Procurement Notes
Verify the manufacturer designation as Infineon Technologies, as International Rectifier was acquired. Confirm the specific suffix DPBF indicates lead-free compliance and RoHS adherence. Ensure the package type matches the required TO-247AC footprint for thermal management and mechanical mounting in the target design.
Selection Notes
Select this component for applications requiring high current handling up to 70 A at 650 V. The ultrafast switching characteristics make it suitable for systems operating between 8 kHz and 30 kHz. Consider the thermal resistance and maximum junction temperature when designing heat sinks for continuous duty cycles.
Part Context
This IGBT belongs to the IRGP series, which focuses on high-efficiency power conversion. The series integrates advanced trench gate technology to improve efficiency compared to older planar designs. It is designed to replace previous generation devices in medium-power industrial and renewable energy applications.
Replacement Considerations
Consult official Infineon documentation for direct pin-compatible substitutes. Verify that any alternative device maintains the same voltage rating, current capacity, and switching speed requirements for the specific application circuit.
