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The IRGP4790D-EPBF is a 650 V n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes the TO-247AD package for through-hole mounting and supports a maximum junction temperature of 175°C. The device provides a continuous collector current of 140 A at 25°C case temperature and handles a clamped inductive load current of 300 A. Key electrical parameters include a typical saturation voltage of 1.7 V at 75 A, total switching loss of 6.4 mJ, and a short-circuit safe operating area duration of 5.5 µs.
Verify that the ordering suffix 'EP' corresponds to the specified TO-247AD package rather than the standard TO-247AC found in non-EP variants. Confirm the component meets industrial qualification levels per JEDEC JESD47F. Ensure the procurement documentation explicitly states compliance with lead-free and RoHS requirements as defined in the official datasheet specifications.
Select this component when designing circuits requiring high reliability under extreme thermal conditions up to 175°C. The integrated ultrafast soft recovery diode makes it suitable for hard-switching topologies where fast diode recovery is critical. Evaluate the 5.5 µs short-circuit withstand capability against potential fault currents in the specific application environment.
This part belongs to the IRGP4790 series of IGBTs from Infineon Technologies. While the base model IRGP4790DPBF uses the TO-247AC package, the IRGP4790D-EPBF variant specifically utilizes the TO-247AD package. Both share identical electrical characteristics but differ in physical housing dimensions.
IRGP4790DPBF