SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IRGP6640D-EPBF is an N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It features a collector-to-emitter voltage rating of 600 V and supports continuous collector currents of 53 A at 25°C case temperature and 40 A at 100°C. The device utilizes a TO-247AD package and operates within a junction temperature range of -40°C to +175°C. Key electrical characteristics include a typical saturation voltage of 1.65 V at 24 A and a maximum short-circuit withstand time of 5 µs.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package selection. The EPBF variant corresponds to the TO-247AD package, while standard versions may utilize different housings. Confirm RoHS compliance status and industrial qualification levels prior to integration into production designs.
Select this component for applications requiring robust hard switching capabilities and high power density. The integrated ultrafast soft recovery diode makes it suitable for topologies demanding fast commutation. Ensure thermal management strategies account for the specified junction-to-case thermal resistance values under varying load conditions.
This IGBT belongs to the IRGP series from Infineon Technologies, formerly International Rectifier. The series focuses on medium-power applications utilizing trench gate technology. The EPBF designation indicates environmental compliance and specific packaging variations within the broader product family.
IRGP6640DPbF