IRGP6660DPBF

Overview

The IRGP6660DPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It features a 600V collector-to-emitter voltage rating and operates within a junction temperature range of -40°C to +175°C. The device supports a continuous collector current of 95A at 25°C case temperature and 60A at 100°C. Key electrical parameters include a typical VCE(sat) of 1.65V at 48A, a maximum power dissipation of 330W at 25°C, and a short-circuit withstand time of 5µs. It is housed in a TO-247AC through-hole package.

Feature Summary

• Integrated ultrafast soft recovery diode optimized for full bridge hard switch converters
• Positive VCE(on) temperature coefficient enabling excellent current sharing in parallel operation
• Square Reverse Bias Safe Operating Area (RBSOA) supporting rugged hard switching performance
• 5µs short circuit safe operating area (SCSOA) facilitating short circuit protection schemes

Applications

• Welding equipment
• H-Bridge converters
• Full bridge hard switch converters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm the exact package variant. The standard DPBF designation corresponds to the TO-247AC package, while the EPBF suffix indicates the TO-247AD package. Ensure that the selected component matches the required mechanical footprint and mounting torque specifications for the target application design.

Selection Notes

Select this component based on its 600V blocking capability and high current handling suitable for industrial power conversion. Consider the thermal resistance characteristics when designing heat sinks, as the device dissipates significant power during switching. The positive temperature coefficient of the saturation voltage is critical for applications requiring multiple devices to be operated in parallel without active current balancing circuits.

Part Context

This IGBT belongs to the UltraFast series from International Rectifier, now part of Infineon Technologies. It is designed to provide high efficiency across a wide range of applications by minimizing both conduction and switching losses. The integration of the fast recovery diode allows for compact designs in topologies such as H-bridges and inverters where freewheeling paths are essential.

Replacement Considerations

The IRGP6660D-EPBF serves as a direct functional substitute, differing only in the physical package type (TO-247AD instead of TO-247AC). Designers must verify mechanical compatibility before swapping between these two variants.

FAQ

What is the short-circuit withstand time for this IGBT?

The device has a specified short-circuit withstand time of 5 microseconds.

Does this component have a positive or negative temperature coefficient for VCE(sat)?

It features a positive VCE(on) temperature coefficient, which aids in current sharing during parallel operation.

What type of diode is integrated with the IGBT?

It includes an integrated ultrafast soft recovery diode optimized for full bridge hard switch converters.