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Product Detailed Parameters
- Description：IGBT 600V 70A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Bag
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：70 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 39A
- Power - Max：200 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
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Overview
The IRGPC50F is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 70 A at 25 °C. The device is housed in a TO-247AC through-hole package, measuring 15.9 x 5.3 x 20.3 mm. It supports a power dissipation of 200 W and operates within a temperature range of -55 °C to +150 °C. The maximum gate-emitter voltage is ±20 V.
Feature Summary
- High-speed switching capability suitable for high-power applications
- Robust thermal performance with 200 W power dissipation capacity
- Through-hole mounting design for secure mechanical installation
Applications
- High-power industrial motor drives
- Switch-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific suffix and marking on the component body to confirm it matches the standard IRGPC50F designation without additional variant codes. Ensure the TO-247AC package dimensions align with your PCB footprint requirements. Check for RoHS compliance status if required by your manufacturing standards. Confirm the supplier provides original manufacturer documentation to guarantee authenticity and traceability.
Selection Notes
Select this component when a 600 V blocking voltage and 70 A continuous current are required in a through-hole configuration. Consider the 200 W thermal dissipation limit and ensure adequate heatsinking for the intended operating environment. Evaluate the switching speed characteristics against the application's frequency requirements. Compare alternative IGBTs if lower saturation voltage or different package styles are necessary.
Part Context
This IGBT belongs to Infineon’s discrete semiconductor portfolio, specifically designed for power management and conversion systems. It utilizes silicon technology to handle high-energy switching tasks. The component is part of a broader family of power transistors used in industrial and automotive electronics where reliability under high stress conditions is critical.
Replacement Considerations
Publicly confirmed substitute part numbers for the IRGPC50F were not identified in the provided source material. Users should consult official Infineon cross-reference guides or datasheets for verified alternatives that match the 600V/70A specifications and TO-247AC package.
