IRGPF40F

$4.28

Description：IGBT 900V 31A TO-247AC
Series：-

SKU:2520e7f0c45c Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 900V 31A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Bag
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：900 V
Current - Collector (Ic) (Max)：31 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：3.3V @ 15V, 17A
Power - Max：160 W
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC

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IRGPF40F

Overview

The IRGPF40F is a single N-channel IGBT from Infineon Technologies, designed for high-power switching applications. It features a collector-emitter breakdown voltage of 900 V and a continuous collector current rating of 31 A. The device utilizes Fast Soft Recovery (FSR) technology to minimize reverse recovery charge and energy. Packaged in a TO-247AC through-hole case, it offers a maximum power dissipation of 160 W at 25°C. The component operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Integrates Fast Soft Recovery (FSR) diode for reduced switching losses
Optimized for low conduction and switching losses in hard-switching circuits
Robust thermal performance via TO-247AC package design

Applications

Motor drives and inverters
Switched-mode power supplies (SMPS)
Induction heating systems

Procurement Notes

Verify the specific datasheet revision and ordering suffixes with the manufacturer or authorized distributors before procurement. Confirm that the TO-247AC package dimensions match the target PCB layout requirements. Ensure compliance with RoHS directives if applicable to the end product. Cross-reference electrical parameters against the latest official Infineon documentation to avoid discrepancies.

Selection Notes

Select this component for applications requiring high voltage blocking capability up to 900 V combined with moderate current handling. The FSR diode characteristic makes it suitable for hard-switching topologies where minimizing reverse recovery effects is critical. Evaluate thermal management strategies based on the 160 W dissipation limit and ensure gate drive voltages remain within specified safe operating areas.

Part Context

This part belongs to Infineon's IGBT family, specifically utilizing the TRENCHSTOP technology platform. It is engineered to balance efficiency and ruggedness for industrial power conversion. The TO-247AC package provides mechanical stability and efficient heat transfer capabilities compared to surface-mount alternatives.