IRGPF50F

$7.28

Description：IGBT 900V 51A TO-247AC
Series：-

SKU:e2232c460fc9 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 900V 51A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Bag
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：900 V
Current - Collector (Ic) (Max)：51 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 28A
Power - Max：200 W
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC

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IRGPF50F

Overview

The IRGPF50F is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 900 V and a maximum continuous collector current of 51 A. The device has a typical collector-emitter saturation voltage of 2.7 V at a gate-emitter voltage of 15 V and a collector current of 28 A. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-247AC through-hole package with a maximum power dissipation of 200 W.

Feature Summary

High-voltage capability with 900 V collector-emitter breakdown rating for robust switching applications.
Fast switching performance optimized for high-frequency power conversion circuits.
Through-hole mounting in a TO-247AC package for reliable thermal management and mechanical stability.

Applications

Industrial motor drives
Uninterruptible power supplies (UPS)
Induction heating systems

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the TO-247AC package dimensions match the target PCB footprint and thermal design requirements. Ensure that the gate drive circuitry provides the required 15 V level for optimal saturation voltage performance. Check for any end-of-life status updates or recommended replacement parts from Infineon.

Selection Notes

Select this component when a 900 V blocking voltage is required rather than standard 600 V or 1200 V options. The 51 A current rating suits medium-power applications where through-hole assembly is preferred over surface mount. Consider the 2.7 V saturation voltage for efficiency calculations at moderate load currents. Evaluate the thermal resistance of the TO-247AC package against the expected power dissipation of 200 W under actual operating conditions.

Part Context

The IRGPF50F belongs to Infineon's portfolio of fast IGBTs designed for general-purpose power switching. It utilizes silicon technology to provide a balance between conduction losses and switching speed. The TO-247AC package is a standard industry form factor, facilitating easy integration into existing designs that utilize through-hole components for higher current handling and heat sinking capabilities compared to smaller surface-mount packages.