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Product Detailed Parameters
- Description：IGBT 1200V 45A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Bag
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：45 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.9V @ 15V, 25A
- Power - Max：200 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
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Overview
The IRGPH50F is a 1200 V Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, originally part of the International Rectifier portfolio. It features a TO-247 package and is optimized for medium operating frequencies between 1 kHz and 10 kHz. The device provides high usable current density with simplified gate-drive requirements comparable to power MOSFETs. Key electrical parameters include a collector-emitter saturation voltage of 2.3 V at 25 A and a switching loss rating that accounts for tail losses.
Feature Summary
- Optimized for medium frequency operation ranging from 1 kHz to 10 kHz
- High usable current density compared to comparable bipolar transistors
- Simplified gate-drive requirements similar to power MOSFETs
- Switching-loss rating includes all tail losses
Applications
- High-voltage, high-current applications
- Medium frequency power conversion systems
- Industrial motor drives
Procurement Notes
Verify the manufacturer origin as this component originates from the International Rectifier acquisition by Infineon. Confirm the specific suffix 'F' corresponds to the standard TO-247 package configuration. Ensure compatibility with existing gate drive circuits designed for MOSFET-like simplicity. Check for updated datasheet versions reflecting the transition from IR to Infineon branding.
Selection Notes
Select this IGBT for applications requiring robust performance in the 1 kHz to 10 kHz range. Consider its high current density and simplified drive needs when replacing older bipolar transistors. Evaluate thermal management requirements based on the TO-247 package capabilities. Compare total switching losses including tail effects against alternative devices for efficiency optimization.
Part Context
This component belongs to the legacy International Rectifier IGBT lineup now managed by Infineon Technologies. It represents a bridge technology offering MOSFET ease of use with bipolar current handling capabilities. The product line supports various industrial and commercial power electronics designs requiring reliable medium-frequency switching.
Replacement Considerations
Direct substitutes may include other 1200 V, 25 A IGBTs in TO-247 packages from Infineon or other manufacturers. Verify pinout compatibility and thermal resistance values. Ensure replacement devices meet the same switching frequency optimization criteria.
