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The IRGPS46160DPbF is a 600V Insulated Gate Bipolar Transistor (IGBT) module with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It operates in the Super-247 package and supports a maximum junction temperature of 175°C. The device provides a continuous collector current of 160A at 100°C case temperature and withstands a pulse collector current of 360A. Key electrical parameters include a typical saturation voltage of 1.70V at 120A and a short-circuit safe operating area duration of 5µs.
Verify the component authenticity through official Infineon channels or authorized distributors. Confirm that the ordering suffix matches the specified Super-247 tube packaging format. Ensure compliance with RoHS standards and lead-free requirements as documented in the product qualification data before finalizing procurement orders.
Select this IGBT module when designing systems requiring high current handling capabilities up to 160A and robust short-circuit tolerance. The positive temperature coefficient is critical for applications necessitating parallel device configurations to distribute thermal load effectively. Evaluate thermal resistance values against your specific heatsinking strategy to maintain junction temperatures within the 175°C limit.
This component belongs to the family of high-power discrete IGBT modules designed for industrial power conversion. It integrates a fast-recovery diode to handle inductive loads common in motor drives and welding applications. The Super-247 package offers a balance between high current density and manageable thermal impedance for standard mounting configurations.
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical voltage ratings, current capacities, and package dimensions to fit existing PCB layouts and thermal management systems without redesign.
The device features a 5µs short-circuit safe operating area (SCSOA), allowing it to withstand short-circuit conditions for up to 5 microseconds under specified test conditions.
The positive VCE(ON) temperature coefficient ensures that as the device temperature rises, its saturation voltage increases, which naturally promotes balanced current sharing among multiple devices connected in parallel.
The module includes an integrated ultrafast soft recovery diode, which minimizes reverse recovery losses and electromagnetic interference during switching transitions.