ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT NPT 600V 7.8A TO-252AA
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：7.8 A
- Current - Collector Pulsed (Icm)：15.6 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 3A
- Power - Max：52 W
- Switching Energy：62µJ (on), 39µJ (off)
- Input Type：Standard
- Gate Charge：13 nC
- Td (on/off) @ 25°C：18ns/110ns
- Test Condition：400V, 3A, 100Ohm, 15V
- Reverse Recovery Time (trr)：77 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252AA (DPAK)
Download product information
Overview
The IRGR3B60KD2PBF is a 600 V Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes TRENCHSTOP™ technology for optimized switching performance and low conduction losses. The device is housed in a TO-247 package, suitable for high-power applications requiring robust thermal management and electrical isolation.
Feature Summary
- Integrated ultrafast soft recovery diode for efficient commutation
- TRENCHSTOP™ technology for reduced switching losses
- High short-circuit capability for system protection
- Low saturation voltage for improved efficiency
Applications
- Induction heating systems
- Switched-mode power supplies (SMPS)
- Motor control drives
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the complete part number including suffixes to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status as per the latest datasheet revision. Check for any specific handling instructions related to electrostatic discharge during assembly. Ensure compatibility with existing PCB footprints and thermal design requirements before finalizing procurement.
Selection Notes
Select this component for applications requiring high-voltage switching with integrated freewheeling diode functionality. Consider the thermal resistance and package type for heat dissipation needs. Evaluate switching frequency requirements against the device's rated capabilities. Compare total loss characteristics with alternative IGBTs for optimal system efficiency.
Part Context
This IGBT belongs to Infineon's TRENCHSTOP™ family, known for balancing low conduction and switching losses. It is designed for medium to high-power industrial applications. The integration of the diode simplifies circuit design by reducing component count and parasitic inductance compared to discrete solutions.
Replacement Considerations
Direct replacements may include other 600 V IGBTs with integrated diodes from Infineon or other manufacturers. Verify pinout compatibility, thermal characteristics, and electrical parameters such as Vce(sat), Qg, and switching times. Ensure the substitute meets the same safety and reliability standards required for the application.
