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The IRGR3B60KD2TRLP is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes TRENCHSTOP technology and features a DPAK (TO-252AA) surface-mount package with three pins. The device has a maximum collector-emitter voltage of 600 V and a continuous collector current of 7.8 A at 25°C. Key electrical parameters include a saturation voltage of 1.9 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 52 W. It operates within a temperature range of -55°C to +175°C.
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Select this component for applications requiring a 600V rated single IGBT in a surface-mount format. Ensure the design accommodates the 7.8A current limit and 52W thermal dissipation constraints. Verify that the driving circuitry supports the required gate-emitter voltage levels and switching frequencies appropriate for TRENCHSTOP devices.
This component belongs to Infineon's TRENCHSTOP family of IGBTs, which are designed for efficiency and reliability in power electronics. The IRGR3B60KD2TRLP specifically targets cost-sensitive applications where surface-mount assembly is preferred over through-hole mounting, offering a balance between performance and form factor.
No public confirmed substitute part numbers are available in the provided documentation. Consult official replacement guides for equivalent voltage and current ratings in similar packages.
The maximum operating temperature is +175°C.
The provided data does not indicate AEC-Q100 qualification for this specific part number.