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The IRGR3B60KD2TRP is a single NPT IGBT from Infineon Technologies, rated at 600V collector-emitter voltage. It features a saturation voltage of 1.9V and operates with a continuous collector current of 7.8A. The device dissipates 52W of power and functions within a temperature range of -55°C to +150°C. Packaged in a DPAK (TO-252-3) surface-mount format, it includes an integrated anti-parallel diode with a forward voltage of 1.65V and reverse recovery charge of 240nC.
This component is officially obsolete and no longer manufactured by Infineon. Verify availability through authorized distributors for remaining stock or consider the listed substitutes. Ensure all replacement parts meet original electrical specifications and thermal requirements before integration into existing designs.
Select this part for applications requiring a 600V rating with moderate current handling in a compact surface-mount package. Consider the 52W power dissipation limit and operating temperature range when designing thermal management solutions. Verify gate drive compatibility with the specified leakage and saturation characteristics.
Part of Infineon's TRENCHSTOP™ IGBT family, designed for general-purpose switching. The DPAK package offers a balance between thermal performance and board space efficiency compared to larger through-hole options. It serves as a discrete solution for isolated or semi-bridge configurations.
Officially confirmed substitute: IKD04N60RFATMA1. Verify pinout compatibility and electrical parameters against the original datasheet before implementation.
The maximum operating temperature is +150°C.
Yes, it features an integrated anti-parallel fast recovery diode.