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The IRGR4045DTRLPBF is a Trench IGBT with an ultrafast soft recovery diode in a DPAK-3 package. It features a 600V collector-emitter breakdown voltage and a maximum junction temperature of 175°C. The device provides a continuous collector current of 12A at 25°C, reducing to 6.0A at 100°C case temperature. Collector-emitter saturation voltage ranges from 1.72V to 2.14V depending on temperature. Total switching loss reaches 329μJ at 175°C. The co-packaged diode supports a continuous forward current of 8.0A at 25°C.
Verify the specific suffix 'TRLPBF' against official Infineon documentation to confirm tape-and-reel packaging and lead-free compliance. Ensure the component matches the industrial market qualification standards specified in the datasheet. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before procurement.
Select this component for designs requiring a compact surface-mount solution with integrated fast recovery diodes. Evaluate thermal management requirements based on the 1.9°C/W junction-to-case resistance. Consider the 600V rating and 12A current capability for medium-power switching applications where low EMI and high efficiency are critical design constraints.
This component belongs to the IRGR series of insulated gate bipolar transistors manufactured by Infineon Technologies. It represents an evolution of trench IGBT technology designed to reduce both conduction and switching losses. The product line targets industrial applications demanding robust performance and reliability under high-frequency switching conditions.
Consult official replacement guides for verified substitutes such as the IRGP4045D or other compatible DPAK-3 IGBTs with matching voltage and current ratings.
The device has a short circuit safe operating area (SCSOA) rating of 5 microseconds.
Yes, it features a positive VCE(on) temperature coefficient which facilitates excellent current sharing in parallel operation.
The typical reverse recovery energy (Erec) of the diode is 178 μJ at a junction temperature of 175°C.