IRGR4045DTRLPBF

IRGR4045DTRLPBF

  • Description:IGBT TRENCH 600V 12A TO-252AA
  • Series:-

SKU:0507ac496e14 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT TRENCH 600V 12A TO-252AA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • IGBT Type:Trench
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):12:00 AM
  • Current - Collector Pulsed (Icm):18 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 6A
  • Power - Max:77 W
  • Switching Energy:56µJ (on), 122µJ (off)
  • Input Type:Standard
  • Gate Charge:19.5 nC
  • Td (on/off) @ 25°C:27ns/75ns
  • Test Condition:400V, 6A, 47Ohm, 15V
  • Reverse Recovery Time (trr):74 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252AA (DPAK)
  • Grade:-
  • Qualification:-

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IRGR4045DTRLPBF

Overview

The IRGR4045DTRLPBF is a Trench IGBT with an ultrafast soft recovery diode in a DPAK-3 package. It features a 600V collector-emitter breakdown voltage and a maximum junction temperature of 175°C. The device provides a continuous collector current of 12A at 25°C, reducing to 6.0A at 100°C case temperature. Collector-emitter saturation voltage ranges from 1.72V to 2.14V depending on temperature. Total switching loss reaches 329μJ at 175°C. The co-packaged diode supports a continuous forward current of 8.0A at 25°C.

Feature Summary

  • Utilizes low VCE(on) trench technology for high efficiency across wide application ranges.
  • Features an ultrafast soft recovery co-packaged diode for optimized reverse recovery performance.
  • Provides rugged transient performance with a 5μs short circuit safe operating area (SCSOA).
  • Ensures excellent current sharing in parallel operation due to positive VCE(on) temperature coefficient.

Applications

  • Motor drive inverters
  • Switching mode power supplies
  • High frequency inverters

Procurement Notes

Verify the specific suffix 'TRLPBF' against official Infineon documentation to confirm tape-and-reel packaging and lead-free compliance. Ensure the component matches the industrial market qualification standards specified in the datasheet. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before procurement.

Selection Notes

Select this component for designs requiring a compact surface-mount solution with integrated fast recovery diodes. Evaluate thermal management requirements based on the 1.9°C/W junction-to-case resistance. Consider the 600V rating and 12A current capability for medium-power switching applications where low EMI and high efficiency are critical design constraints.

Part Context

This component belongs to the IRGR series of insulated gate bipolar transistors manufactured by Infineon Technologies. It represents an evolution of trench IGBT technology designed to reduce both conduction and switching losses. The product line targets industrial applications demanding robust performance and reliability under high-frequency switching conditions.

Replacement Considerations

Consult official replacement guides for verified substitutes such as the IRGP4045D or other compatible DPAK-3 IGBTs with matching voltage and current ratings.

FAQ

What is the maximum short circuit time for the IRGR4045DTRLPBF?

The device has a short circuit safe operating area (SCSOA) rating of 5 microseconds.

Does the IRGR4045DTRLPBF have a positive temperature coefficient?

Yes, it features a positive VCE(on) temperature coefficient which facilitates excellent current sharing in parallel operation.

What is the typical reverse recovery energy of the co-packaged diode?

The typical reverse recovery energy (Erec) of the diode is 178 μJ at a junction temperature of 175°C.

IRGR4045DTRLPBFIRGR4045DTRLPBF

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