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The IRGS10B60KDTRLP is a non-punch-through IGBT with an integrated ultrafast soft recovery diode, housed in a D2PAK package. It features a 600 V collector-emitter voltage rating and supports continuous collector currents of 35 A at 25°C and 19 A at 100°C. The device offers a maximum power dissipation of 156 W at 25°C case temperature and includes 10 μs short-circuit capability. Key electrical parameters include a typical saturation voltage of 1.8 V at 10 A and a total gate charge of 38 nC.
Verify the specific suffix TRLP corresponds to tape-and-reel packaging when sourcing this component. Confirm that the procurement matches the Industrial market qualification standards defined by International Rectifier. Ensure the ordering part number aligns with lead-free specifications as indicated by the PbF designation in the base model family documentation.
Select this component for designs prioritizing low switching losses and reduced EMI through its ultrasoft recovery diode. The D2PAK package facilitates surface-mount assembly while maintaining thermal performance suitable for industrial environments. Consider the 10 μs short-circuit withstand time for robust protection schemes in inductive load circuits.
This device belongs to the IRG/B/S/SL10B60KDPbF product family manufactured by International Rectifier, now part of Infineon Technologies. The family encompasses various packages including TO-220AB, D2PAK, and TO-262, all sharing identical electrical characteristics and core technology. The IRGS10B60KDTRLP specifically denotes the D2PAK variant with reel packaging.
Direct pin-compatible substitutes within the same electrical specification family include IRGB10B60KD (TO-262 package) and IRGS10B60KDPbF (D2PAK package). Verify thermal resistance differences if changing package types, as junction-to-case values may vary slightly between D2PAK and other form factors in the series.
The device provides a short-circuit safe operating area (SCSOA) capability of 10 microseconds at a junction temperature of 150°C.
The ultrasoft diode reverse recovery characteristics are designed to significantly reduce electromagnetic interference (EMI) during switching transitions.
The device exhibits a positive VCE(on) temperature coefficient, which facilitates excellent current sharing when multiple units are operated in parallel.