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Product Detailed Parameters
- Description：IGBT TRENCH 600V 48A D2PAK
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：48 A
- Current - Collector Pulsed (Icm)：96 A
- Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 24A
- Power - Max：250 W
- Switching Energy：115µJ (on), 600µJ (off)
- Input Type：Standard
- Gate Charge：50 nC
- Td (on/off) @ 25°C：41ns/104ns
- Test Condition：400V, 24A, 10Ohm, 15V
- Reverse Recovery Time (trr)：89 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The IRGS4062DPbF is a single insulated gate bipolar transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes low VCE(on) Trench IGBT technology to minimize conduction and switching losses. The device features a maximum junction temperature of 175°C and supports a short circuit safe operating area (SOA) of at least 5 µs. It is housed in a lead-free D2PAK package.
Feature Summary
- Low VCE(on) Trench IGBT Technology
- Ultrafast Soft Recovery Co-Pak Diode
- Positive VCE(on) Temperature Coefficient
- Square RBSOA
Applications
- Motor Drives
- Switched Mode Power Supplies (SMPS)
- High Frequency Inverters
- DC-AC Converters
Procurement Notes
Verify the component datasheet against the manufacturer's official documentation to confirm current specifications and compliance status. Ensure that the ordering suffix matches the required package type and material composition. Cross-reference part markings with official product images to prevent counterfeit components.
Selection Notes
Select this component for applications requiring high efficiency across a wide range of frequencies due to its low switching losses. Consider the positive VCE(on) temperature coefficient for excellent current sharing in parallel operation. Evaluate thermal resistance values to ensure adequate heat dissipation within the specified operating temperature range.
Part Context
This component belongs to the IRGS series of single IGBTs with integrated diodes. It is designed for industrial market applications. The device is available in a D2PAK package, providing a compact solution for power electronics designs requiring robust transient performance and low electromagnetic interference.
Replacement Considerations
IRGSL4062DPbF
FAQ
What is the maximum short circuit time rating?
The device has a short circuit SOA rating of at least 5 µs.
Does the IGBT have a positive or negative temperature coefficient?
It features a positive VCE(on) temperature coefficient, which aids in parallel operation.
What type of recovery diode is integrated?
It includes an ultrafast soft recovery co-packaged diode.
