IRGS4062DTRLPBF

Description：IGBT TRENCH 600V 48A TO263-3
Series：-

SKU:09ac7d3463c7 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 600V 48A TO263-3
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：48 A
Current - Collector Pulsed (Icm)：96 A
Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 24A
Power - Max：250 W
Switching Energy：115µJ (on), 600µJ (off)
Input Type：Standard
Gate Charge：50 nC
Td (on/off) @ 25°C：41ns/104ns
Test Condition：400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr)：89 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：PG-TO263-3
Grade：-
Qualification：-

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IRGS4062DTRLPBF

Overview

The IRGS4062DTRLPBF is a 600V n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes low VCE(on) Trench IGBT technology to minimize conduction and switching losses. The device supports a maximum junction temperature of 175°C and features a 5µs short circuit safe operating area (SOA). Key electrical parameters include a collector-to-emitter voltage (VCES) of 600V, a continuous collector current (IC) of 24A at TC=100°C, and a typical saturation voltage (VCE(on)) of 1.65V at IC=24A and TJ=100°C.

Feature Summary

Low VCE(on) Trench IGBT Technology for high efficiency
Ultrafast Soft Recovery Co-Pak Diode for reduced EMI
Positive VCE(on) Temperature Coefficient for parallel operation
Square RBSOA and 5µs Short Circuit SOA for ruggedness

Applications

Motor drives
Switched-mode power supplies
High frequency inverters
DC-AC converters

Procurement Notes

Verify the component authenticity against official Infineon documentation. Confirm that the package type matches the required D²PAK or TO-262 footprint. Ensure the specific suffix aligns with the lead-free RoHS compliance requirements specified in the datasheet. Cross-reference the manufacturer part number to avoid counterfeit components.

Selection Notes

Select this component for applications requiring high reliability and efficient thermal management. The positive temperature coefficient facilitates easy paralleling for higher current capacity. Consider the 175°C maximum junction temperature for high-temperature environments. Evaluate the switching loss characteristics against the specific gate resistance and load conditions of the target circuit design.

Part Context

This IGBT belongs to the IRGS series, designed for industrial applications. It integrates a fast recovery diode within the same package to simplify circuit topology. The device is optimized for high-frequency switching operations while maintaining low conduction losses. It represents a robust solution for power conversion systems requiring high voltage blocking capabilities.