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The IRGS4064DTRLPBF is a D2PAK-packaged IGBT with an integrated ultrafast soft recovery diode. It features Trench IGBT technology for low VCE(sat) and switching losses, supporting a maximum junction temperature of 175 °C. The device provides a 600 V collector-emitter breakdown voltage and handles up to 20 A continuous current at 25 °C case temperature. It includes a 5 μs short-circuit safe operating area (SCSOA) and a square reverse bias safe operating area (RBSOA).
Verify the specific suffix 'DSTRPBF' against the official datasheet which lists 'DPbF'. Confirm that the requested component matches the exact electrical specifications and package dimensions provided in the Infineon documentation before procurement.
Select this component for applications requiring high efficiency across wide load ranges. Ensure thermal management supports the 175 °C junction limit. Verify gate drive requirements align with the specified threshold voltage and total gate charge parameters.
This part belongs to the IRGS series of discrete IGBTs manufactured by Infineon Technologies. It utilizes advanced trench technology to optimize performance between conduction and switching losses, targeting industrial power conversion applications.
Consult official replacement guides for verified substitutes. Cross-reference pinouts and thermal characteristics carefully when considering alternative models from other manufacturers.
The device supports a short-circuit safe operating area (SCSOA) of 5 microseconds.
It features a positive VCE(sat) temperature coefficient, facilitating parallel operation.