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The IRGS4607DPbF is a 600 V Insulated Gate Bipolar Transistor with an integrated ultrafast soft recovery diode, housed in a D2Pak (TO-263AB) package. It supports a continuous collector current of 11 A at 25°C and features a maximum junction temperature of 175°C. The device exhibits low saturation voltage and switching losses, alongside a 5 µs short-circuit safe operating area.
Verify the specific suffix against official documentation to confirm the exact package variant and lead-free status. Confirm that the component meets RoHS compliance requirements for your target market. Ensure the ordering quantity matches the standard tube or tape-and-reel packaging options provided by the manufacturer.
Select this component for applications requiring robust transient performance and excellent current sharing in parallel operations. The positive temperature coefficient of the saturation voltage facilitates reliable thermal management. Consider the 175°C maximum junction temperature rating for high-temperature industrial environments.
This part belongs to the IRGR/S/B4607DPbF family, which includes variants in D-Pak and TO-220AB packages. All variants share identical electrical characteristics and are designed for high-efficiency power conversion. The D2Pak package provides a balance between thermal performance and surface-mount convenience.
Direct replacements include IRGR4607DPbF and IRGB4607DPbF, which share the same electrical specifications but differ in physical package form factors.