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Product Detailed Parameters
- Description：IGBT 600V 16A 77W D2PAK
- Series：-
- Mfr：Infineon Technologies
- Package：Tube,Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：16 A
- Current - Collector Pulsed (Icm)：18 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 6A
- Power - Max：77 W
- Switching Energy：56µJ (on), 122µJ (off)
- Input Type：Standard
- Gate Charge：13 nC
- Td (on/off) @ 25°C：27ns/75ns
- Test Condition：400V, 6A, 47Ohm, 15V
- Reverse Recovery Time (trr)：74 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The IRGS4610DPBF is a 600V Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, housed in a D2-Pak package. It features a maximum continuous collector current of 16A at 25°C and supports a junction temperature up to 175°C. Key electrical parameters include a typical VCE(sat) of 2.07V at 6A/15V, total gate charge of 13nC, and a short circuit withstand time of 5μs. The device offers low switching losses and a square Reverse Bias Safe Operating Area (RBSOA).
Feature Summary
- Integrated ultrafast soft recovery diode for high efficiency across wide application ranges.
- Square RBSOA and rugged hard switching performance ensure improved reliability.
- Positive VCE(sat) temperature coefficient enables excellent current sharing in parallel operation.
- 5μs short circuit SOA capability allows for effective short circuit protection schemes.
Applications
- Appliance Drives
- Inverters
- UPS
Procurement Notes
Verify the specific suffix DPBF indicates lead-free and RoHS compliance status. Confirm the D2-Pak package outline matches your PCB footprint requirements. Check for any recent revision history updates that may affect thermal or electrical characteristics before finalizing the design.
Selection Notes
Select this component for applications requiring robust hard switching performance and high reliability. The positive temperature coefficient of VCE(sat) makes it suitable for parallel configurations where current balancing is critical. Ensure the gate drive voltage aligns with the specified 15V typical condition for optimal switching loss performance.
Part Context
This IGBT belongs to the IRGx4610 series from International Rectifier, now part of Infineon Technologies. The series includes variants like IRGR4610DPBF and IRGB4610DPBF, differing primarily in packaging (D-PAK vs TO-220AB). The IRGS4610DPBF specifically utilizes the D2-Pak form factor for surface mount assembly.
Replacement Considerations
IRGR4610DPBF (D-PAK), IRGB4610DPBF (TO-220AB)
FAQ
What is the maximum short circuit withstand time for the IRGS4610DPBF?
The device supports a short circuit withstand time of 5 microseconds under specified conditions.
Does the IRGS4610DPBF have a negative or positive temperature coefficient for VCE(sat)?
It has a positive VCE(sat) temperature coefficient, which facilitates better current sharing when devices are operated in parallel.
What type of diode is integrated with the IGBT in this component?
The component integrates an ultrafast soft recovery diode to minimize reverse recovery losses and improve overall system efficiency.
