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Product Detailed Parameters
- Description：IGBT NPT 600V 11A D2PAK
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：11:00 AM
- Current - Collector Pulsed (Icm)：22 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 4A
- Power - Max：63 W
- Switching Energy：73µJ (on), 47µJ (off)
- Input Type：Standard
- Gate Charge：12 nC
- Td (on/off) @ 25°C：22ns/100ns
- Test Condition：400V, 4A, 100Ohm, 15V
- Reverse Recovery Time (trr)：93 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The IRGS4B60KD1PBF is a single NPT (Non-Punch-Through) Insulated Gate Bipolar Transistor manufactured by Infineon Technologies. It features a D2PAK surface-mount package with a maximum collector-emitter voltage of 600 V and a continuous collector current of 11 A at 25°C. The device exhibits a typical saturation voltage of 2.5 V at 4 A and 15 V gate drive, with a power dissipation rating of 63 W. Operating temperatures range from -55°C to +175°C junction temperature.
Feature Summary
- Utilizes NPT technology for robust blocking capability and stable thermal performance.
- Designed for low conduction losses through optimized saturation voltage characteristics.
- Features fast switching speeds suitable for high-frequency inverter applications.
Applications
- High-frequency inverter circuits
- Switched-mode power supplies
- Motor control drives
Procurement Notes
Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm datasheet revisions match design requirements. Check for RoHS compliance documentation if required by target market regulations. Validate package marking against official Infineon specifications to prevent counterfeit substitution.
Selection Notes
Select this component for designs requiring 600V isolation with moderate current handling in compact surface-mount layouts. Ensure thermal management supports the 63W dissipation limit. Verify gate drive voltage compatibility with the specified 15V test conditions. Consider the discontinuation status when planning long-term production lifecycles.
Part Context
This IGBT belongs to the TRENCHSTOP RC series, representing Infineon's discrete power transistor lineup. It serves as a replacement for older International Rectifier designs following the company acquisition. The D2PAK package facilitates automated assembly while providing adequate heat sinking capabilities for medium-power electronics.
Replacement Considerations
Public confirmed substitute part numbers include IKB06N60TATMA1 and IKB10N60TATMA1. Verify pinout compatibility and electrical parameter overlaps before implementation.
